2N7002E-T1-GE3
2N7002E-T1-GE3
Part Number 2N7002E-T1-GE3
Description MOSFET N-CH 60V 240MA SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount
To learn about the specification of 2N7002E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2N7002E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of 2N7002E-T1-GE3.
We are offering 2N7002E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
2N7002E-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002E Datasheet
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
2N7002E-T1-GE3 - Related ProductsMore >>
IPD036N04LGBTMA1
Infineon Technologies, N-Channel 40V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
SI4896DY-T1-GE3
Vishay Siliconix, N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
IRLR6225TRPBF
Infineon Technologies, N-Channel 20V 100A (Tc) 63W (Tc) Surface Mount D-Pak, HEXFET®
View
BSC105N10LSFGATMA1
Infineon Technologies, N-Channel 100V 11.4A (Ta), 90A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
FQP70N10
ON Semiconductor, N-Channel 100V 57A (Tc) 160W (Tc) Through Hole TO-220-3, QFET®
View
SI4838DY-T1-E3
Vishay Siliconix, N-Channel 12V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
View
CSD19536KTTT
Texas Instruments, N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
View
IRFB3206PBF
Infineon Technologies, N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
View
IXFP3N120
IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220AB, HiPerFET™
View
SUP57N20-33-E3
Vishay Siliconix, N-Channel 200V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®
View
VN0550N3-G
Microchip Technology, N-Channel 500V 50mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
STFU18N65M2
STMicroelectronics, N-Channel 650V 12A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
View
2N7002E-T1-GE3 - Tags