SI1416EDH-T1-GE3
SI1416EDH-T1-GE3
Part Number SI1416EDH-T1-GE3
Description MOSFET N-CH 30V 3.9A SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
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Lead Time To be Confirmed
Detailed Description N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363
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SI1416EDH-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1416EDH
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
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