SIR158DP-T1-RE3
SIR158DP-T1-RE3
Part Number SIR158DP-T1-RE3 Description MOSFET N-CH 30V 60A POWERPAKSO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 60A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR158DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR158DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR158DP-T1-RE3.
We are offering SIR158DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR158DP-T1-RE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR158DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen III Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4980pF @ 15V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR158DP-T1-RE3 - Related ProductsMore >>
TPN2R703NL,L1Q Toshiba Semiconductor and Storage, N-Channel 30V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
IXFX64N60Q3 IXYS, N-Channel 600V 64A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
View
AOTF27S60L Alpha & Omega Semiconductor Inc., N-Channel 600V 27A (Tc) 50W (Tc) Through Hole TO-220-3F, aMOS™
View
BSP298H6327XUSA1 Infineon Technologies, N-Channel 400V 500mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
APT58M80J Microsemi Corporation, N-Channel 800V 60W (Tc) 960W (Tc) Chassis Mount SOT-227,
View
STB40N60M2 STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ II Plus
View
IPS70R360P7SAKMA1 Infineon Technologies, N-Channel 700V 12.5A (Tc) 59.5W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
TK25E60X,S1X Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-220, DTMOSIV-H
View
PSMN039-100YS,115 Nexperia USA Inc., N-Channel 100V 28.1A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,
View
IRFI540NPBF Infineon Technologies, N-Channel 100V 20A (Tc) 54W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
View
STL16N65M2 STMicroelectronics, N-Channel 650V 7.5A (Tc) 56W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2
View
PSMNR90-30BL,118 Nexperia USA Inc., N-Channel 30V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
SIR158DP-T1-RE3 - Tags
English
