BS107PSTZ
BS107PSTZ
Part Number BS107PSTZ Description MOSFET N-CH 200V 0.12A TO92-3 Package / Case E-Line-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 120mA (Ta) 500mW (Ta) Through Hole E-Line (TO-92 compatible)
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BS107PSTZ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BS107P Standard Package 1 Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.6V, 5V Rds On (Max) @ Id, Vgs 30Ohm @ 100mA, 5V Vgs(th) (Max) @ Id - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3
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