Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	15000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.8V
Frequency - Transition	22GHz
Noise Figure (dB Typ @ f)	1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
Gain	16dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 20mA, 3V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	PG-TSLP-3-1
Base Part Number	BFR460

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MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
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BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
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BFR193L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSLP-3-1,	View
BFP540FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount 4-TSFP,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
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BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View

BFR460L3E6327XTMA1

Part NumberBFR460L3E6327XTMA1