Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFP740F
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	42GHz
Noise Figure (dB Typ @ f)	0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
Gain	27.5dB
Power - Max	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 25mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP

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MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI,	View
PH2731-75L	M/A-Com Technology Solutions, RF Transistor NPN 65V 7A 75W Chassis Mount,	View
MAPR-000912-500S00	M/A-Com Technology Solutions, RF Transistor NPN 80V 52.5A 500W Chassis Mount,	View
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BFP740FH6327XTSA1

Part NumberBFP740FH6327XTSA1