APT75GP120B2G
APT75GP120B2G
Part Number APT75GP120B2G
Description IGBT 1200V 100A 1042W TMAX
Package / Case TO-247-3 Variant
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Lead Time To be Confirmed
Detailed Description IGBT PT 1200V 100A 1042W Through Hole
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APT75GP120B2G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT75GP120B2
Standard Package 1
Manufacturer Microsemi Corporation
Series POWER MOS 7®
Packaging Tube
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Current - Collector Pulsed (Icm) 300A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Power - Max 1042W
Switching Energy 1620µJ (on), 2500µJ (off)
Input Type Standard
Gate Charge 320nC
Td (on/off) @ 25°C 20ns/163ns
Test Condition 600V, 75A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
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