Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTH60TS65
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	58A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Power - Max	197W
Switching Energy	-
Input Type	Standard
Gate Charge	58nC
Td (on/off) @ 25°C	27ns/105ns
Test Condition	400V, 30A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

IXYH16N170C	IXYS, IGBT 1700V 40A 310W Through Hole TO-247 (IXYH), XPT™	View
STGP15H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 30A 115W Through Hole TO-220,	View
RGT8NL65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS,	View
NGTG35N65FL2WG	ON Semiconductor, IGBT Field Stop 650V 70A 300W Through Hole TO-247-3,	View
RGT50TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 48A 174W Through Hole TO-247N,	View
IXYX30N170CV1	IXYS, IGBT 1700V 108A 937W Through Hole PLUS247™-3, XPT™	View
FGH40N60UFDTU	ON Semiconductor, IGBT Field Stop 600V 80A 290W Through Hole TO-247-3,	View
STGWA40IH65DF	STMicroelectronics, IGBT Trench Field Stop 650V 80A 238W Through Hole TO-247 Long Leads, IH	View
RGT16BM65DTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Surface Mount TO-252,	View
APT36GA60B	Microsemi Corporation, IGBT PT 600V 65A 290W Through Hole TO-247 [B], POWER MOS 8™	View
SGL160N60UFDTU	ON Semiconductor, IGBT 600V 160A 250W Through Hole TO-264-3,	View
HGTG12N60C3D	ON Semiconductor, IGBT 600V 24A 104W Through Hole TO-247-3,	View

RGTH60TS65GC11

Part NumberRGTH60TS65GC11