Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTV60TK65D
Standard Package	450
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	33A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Power - Max	76W
Switching Energy	570µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	64nC
Td (on/off) @ 25°C	33ns/105ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	95ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

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IXGT32N170 TRL	IXYS, IGBT NPT 1700V 75A 350W Surface Mount TO-268,	View
IKP15N65H5XKSA1	Infineon Technologies, IGBT 650V 30A 105W Through Hole PG-TO220-3, TrenchStop®	View
STGF20NB60S	STMicroelectronics, IGBT 600V 24A 40W Through Hole TO-220FP, PowerMESH™	View
STGD3HF60HDT4	STMicroelectronics, IGBT 600V 7.5A 38W Surface Mount DPAK,	View
IKP39N65ES5XKSA1	Infineon Technologies, IGBT Trench Field Stop 650V 62A 188W Through Hole PG-TO220-3, TrenchStop™ 5	View
IXGH50N90B2D1	IXYS, IGBT PT 900V 75A 400W Through Hole TO-247AD (IXGH), HiPerFAST™	View
STGB30H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
STGF14NC60KD	STMicroelectronics, IGBT 600V 11A 28W Through Hole TO-220FP, PowerMESH™	View
IKP15N65F5XKSA1	Infineon Technologies, IGBT 650V 30A 105W Through Hole PG-TO220-3, TrenchStop®	View
APT95GR65B2	Microsemi Corporation, IGBT NPT 650V 208A 892W Through Hole T-MAX™ [B2],	View
RGT50NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 48A 194W Surface Mount LPDS,	View

RGTV60TK65DGVC11

Part NumberRGTV60TK65DGVC11