2SK536-TB-E


2SK536-TB-E

Part Number2SK536-TB-E

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SK536-TB-E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds15pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-59
Package / CaseTO-236-3, SC-59, SOT-23-3

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2SK536-TB-E - Tags

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