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2SK536-TB-E

2SK536-TB-E

Part Number2SK536-TB-E

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 50V 0.1A

Datasheet2SK536

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 50V 100mA (Ta) 200mW (Ta) Surface Mount SC-59

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2SK536-TB-E - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	2SK536
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	15pF @ 10V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59
Package / Case	TO-236-3, SC-59, SOT-23-3

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