SIJ494DP-T1-GE3
SIJ494DP-T1-GE3
Part Number SIJ494DP-T1-GE3 Description MOSFET N-CH 150V 36.8A SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIJ494DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ494DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ494DP-T1-GE3.
We are offering SIJ494DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIJ494DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIJ494DP Standard Package 3000 Manufacturer Vishay Siliconix Series ThunderFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 36.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 23.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 75V FET Feature - Power Dissipation (Max) 69.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIJ494DP-T1-GE3 - Related ProductsMore >>
IRFB4137PBF Infineon Technologies, N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-220, HEXFET®
View
FDD8447L ON Semiconductor, N-Channel 40V 15.2A (Ta), 50A (Tc) 3.1W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
FCMT299N60 ON Semiconductor, N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88, SuperFET® II
View
TSM9ND50CI Taiwan Semiconductor Corporation, N-Channel 500V 9A (Tc) 50W (Tc) Through Hole ITO-220,
View
IPB108N15N3GATMA1 Infineon Technologies, N-Channel 150V 83A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
TSM160N10LCR RLG Taiwan Semiconductor Corporation, N-Channel 100V 46A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),
View
TK3R1A04PL,S4X Toshiba Semiconductor and Storage, N-Channel 40V 82A (Tc) 36W (Tc) Through Hole TO-220SIS, U-MOSIX-H
View
IPD60R1K4C6ATMA1 Infineon Technologies, N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6
View
SIRA84DP-T1-GE3 Vishay Siliconix, N-Channel 30V 60A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
IRFP27N60KPBF Vishay Siliconix, N-Channel 600V 27A (Tc) 500W (Tc) Through Hole TO-247-3,
View
R5016FNJTL Rohm Semiconductor, N-Channel 500V 16A (Tc) 50W (Tc) Surface Mount LPTS,
View
DN3135K1-G Microchip Technology, N-Channel 350V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SIJ494DP-T1-GE3 - Tags
English
