SIHW33N60E-GE3
SIHW33N60E-GE3
Part Number SIHW33N60E-GE3 Description MOSFET N-CH 600V 33A TO-247AD Package / Case TO-3P-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AD
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SIHW33N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHG33N60E Standard Package 480 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V FET Feature - Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD Package / Case TO-3P-3 Full Pack
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