Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2342DS-T1-GE3

SI2342DS-T1-GE3

SI2342DS-T1-GE3

Part NumberSI2342DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 6A SOT-23

DatasheetSI2342DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2342DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2342DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2342DS-T1-GE3.
We are offering SI2342DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2342DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2342DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2342DS-T1-GE3 - Related Products

	NTMFS4834NT1G	ON Semiconductor, N-Channel 30V 13A (Ta), 130A (Tc) 900mW (Ta), 86.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	NVR5198NLT3G	ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	SI8802DB-T2-E1	Vishay Siliconix, N-Channel 8V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	IRF740SPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	DMG301NU-13	Diodes Incorporated, N-Channel 25V 260mA (Ta) 320mW (Ta) Surface Mount SOT-23,	View
	IXFN32N100Q3	IXYS, N-Channel 1000V 28A (Tc) 780W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	RV1C002UNT2CL	Rohm Semiconductor, N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0806,	View
	STF38N65M5	STMicroelectronics, N-Channel 650V 30A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ V	View
	IRF740ASPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	APT47N60BC3G	Microsemi Corporation, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-247 [B],	View
	IRLD014PBF	Vishay Siliconix, N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	TSM60NB380CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 9.5A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),	View

SI2342DS-T1-GE3 - Tags

SI2342DS-T1-GE3 SI2342DS-T1-GE3 PDF SI2342DS-T1-GE3 datasheet SI2342DS-T1-GE3 specification SI2342DS-T1-GE3 image SI2342DS-T1-GE3 India Renesas Electronics India SI2342DS-T1-GE3 buy SI2342DS-T1-GE3 SI2342DS-T1-GE3 price SI2342DS-T1-GE3 distributor SI2342DS-T1-GE3 supplier SI2342DS-T1-GE3 wholesales