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IPA90R1K0C3XKSA1

IPA90R1K0C3XKSA1

Part NumberIPA90R1K0C3XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 900V 5.7A TO220-3

DatasheetIPA90R1K0C3

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 5.7A (Tc) 32W (Tc) Through Hole PG-TO220-FP

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IPA90R1K0C3XKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPA90R1K0C3
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 100V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack

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IPA90R1K0C3XKSA1 - Tags

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