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2SJ661-DL-1E

2SJ661-DL-1E

Part Number2SJ661-DL-1E

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 60V 38A

Datasheet2SJ661

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Surface Mount TO-263-2

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2SJ661-DL-1E - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	2SJ661
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4360pF @ 20V
FET Feature	-
Power Dissipation (Max)	1.65W (Ta), 65W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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