Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

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55GN01MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP,	View
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BFU710F,115	NXP USA Inc., RF Transistor NPN 2.8V 10mA 43GHz 136mW Surface Mount 4-DFP,	View
2SC5066-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM,	View
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI,	View
2SC4098T106P	Rohm Semiconductor, RF Transistor NPN 25V 50mA 300MHz 200mW Surface Mount UMT3,	View
BFR360FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3,	View
BFP420H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 35mA 25GHz 160mW Surface Mount SOT-343,	View
BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
BFP720ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 43GHz 100mW Surface Mount SOT-343,	View
SS9018GBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View

2SC5095-R(TE85L,F)

Part Number2SC5095-R(TE85L,F)