MT3S113TU,LF
MT3S113TU,LF
Part Number MT3S113TU,LF
Description RF TRANS NPN 5.3V 11.2GHZ UFM
Package / Case 3-SMD, Flat Leads
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM
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MT3S113TU,LF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S113TU
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.3V
Frequency - Transition 11.2GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Gain 12.5dB
Power - Max 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Leads
Supplier Device Package UFM
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