Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

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BFU610F,115	NXP USA Inc., RF Transistor NPN 5.5V 10mA 15GHz 136mW Surface Mount 4-DFP,	View
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BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
MRF454	M/A-Com Technology Solutions, RF Transistor NPN 25V 20A 80W Chassis Mount 211-11, Style 2,	View
BFU550R	NXP USA Inc., RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
BFU520R	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
MT3S20TU(TE85L)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 900mW Surface Mount UFM,	View

2SC5095-R(TE85L,F)

Part Number2SC5095-R(TE85L,F)