Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5085
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB ~ 16.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
BFU590GX	NXP USA Inc., RF Transistor NPN 12V 200mA 8.5GHz 2W Surface Mount SOT-223,	View
BFR93AE6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount SOT-23-3,	View
BFU725F/N1,115	NXP USA Inc., RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO,	View
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount S-Mini,	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
BFR182E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23-3,	View
BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
HFA3127BZ	Renesas Electronics America Inc., RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC,	View
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
2N4427	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 500MHz 1W Through Hole TO-39,	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View

2SC5085-Y(TE85L,F)

Part Number2SC5085-Y(TE85L,F)