RCD041N25TL
RCD041N25TL
Part Number RCD041N25TL Description MOSFET N-CH 250V 4A CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
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RCD041N25TL - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RCD041N25 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1300mOhm @ 2A, 10V Vgs(th) (Max) @ Id 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 850mW (Ta), 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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