Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

Part NumberSI3458BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.1A 6-TSOP

DatasheetSI3458BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3458BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3458BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3458BDV-T1-GE3.
We are offering SI3458BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3458BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3458BDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3458BDV-T1-GE3 - Related Products

	FDMS86200	ON Semiconductor, N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	IRLL3303TRPBF	Infineon Technologies, N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	2N7002A-7	Diodes Incorporated, N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
	BUK7Y6R0-60EX	Nexperia USA Inc., N-Channel 60V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	IXFQ28N60P3	IXYS, N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View
	STD11N60DM2	STMicroelectronics, N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2	View
	FDS2670	ON Semiconductor, N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IPW60R190C6FKSA1	Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	FDD6612A	ON Semiconductor, N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	FQT13N06TF	ON Semiconductor, N-Channel 60V 2.8A (Tc) 2.1W (Tc) Surface Mount SOT-223-4, QFET®	View
	CSD13381F4T	Texas Instruments, N-Channel 12V 2.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	IPB017N08N5ATMA1	Infineon Technologies, N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View

SI3458BDV-T1-GE3 - Tags

SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 PDF SI3458BDV-T1-GE3 datasheet SI3458BDV-T1-GE3 specification SI3458BDV-T1-GE3 image SI3458BDV-T1-GE3 India Renesas Electronics India SI3458BDV-T1-GE3 buy SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 price SI3458BDV-T1-GE3 distributor SI3458BDV-T1-GE3 supplier SI3458BDV-T1-GE3 wholesales