Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2N5109
Standard Package	500
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	1.2GHz
Noise Figure (dB Typ @ f)	3dB @ 200MHz
Gain	-
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 15V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View
PH1090-175L	M/A-Com Technology Solutions, RF Transistor NPN 80V 10.5A 188W Chassis Mount,	View
BFP183E7764HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SOT143-4,	View
BFP620H7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4,	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View
MCH4014-TL-H	ON Semiconductor, RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mount 4-MCPH,	View
BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View

2N5109

Part Number2N5109