Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2N2857,2N3839
Standard Package	2000
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.9GHz
Noise Figure (dB Typ @ f)	4.5dB @ 450MHz
Gain	-
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 3mA, 1V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

MRF448	M/A-Com Technology Solutions, RF Transistor NPN 50V 16A 250W Chassis Mount 211-11, Style 2,	View
2SC5226A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2SC5245A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 150mW Surface Mount 3-MCP,	View
BFP842ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 3.7V 40mA 60GHz 120mW Surface Mount SOT-343,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
MRF455	M/A-Com Technology Solutions, RF Transistor NPN 18V 15A 60W Chassis Mount 211-07, STYLE 1,	View
SS9018GBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View

2N2857

Part Number2N2857