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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet ZXTD6717E6
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 1.5A, 1.25A
Voltage - Collector Emitter Breakdown (Max) 15V, 12V
Vce Saturation (Max) @ Ib, Ic 245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V / 200 @ 500mA, 2V
Power - Max 1.1W
Frequency - Transition 180MHz, 220MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6
Supplier Device Package SOT-26
Base Part Number ZXTD6717
DME201010R
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Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 40V 3.5A, 3A 190MHz, 270MHz 1.1W Surface Mount SOT-26,
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Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 45V 500mA 100MHz, 80MHz 600mW Surface Mount 6-TSOP,
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Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 40V, 60V 600mA 300MHz, 200MHz 200mW Surface Mount SOT-363,
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Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN, 2 PNP (H-Bridge) 70V 1A 100MHz 1.25W Surface Mount SOT-223,
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