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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet PBSS4240DPN
Standard Package 3000
Manufacturer Nexperia USA Inc.
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 1.35A, 1.1A
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A / 530mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V / 300 @ 100mA, 5V
Power - Max 1.1W
Frequency - Transition 150MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package 6-TSOP
Base Part Number PBSS4240DPN
PEMZ7,115
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Sanken, Bipolar (BJT) Transistor Array 2 NPN, 2 PNP (H-Bridge) 60V 3A 4W Through Hole 10-SIP,
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Sanken, Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 10A 50MHz 5W Through Hole 12-SIP w/fin,
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