ZTX855
ZTX855
Part Number ZTX855
Description TRANS NPN 150V 4A E-LINE
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Through Hole E-Line (TO-92 compatible)
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ZTX855 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet ZTX855
Standard Package 4000
Manufacturer Diodes Incorporated
Series -
Packaging Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 150V
Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V
Power - Max 1.2W
Frequency - Transition 90MHz
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package E-Line (TO-92 compatible)
PDTC144ETVL
Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250mW Surface Mount TO-236AB,
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ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 300mW Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101
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PMST3904,115
Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SC-70, Automotive, AEC-Q101
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Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 100V 20mA 140MHz 200mW Surface Mount Mini3-G3-B,
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STX13003-AP
STMicroelectronics, Bipolar (BJT) Transistor NPN 400V 1A 1.5W Through Hole TO-92AP,
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DSS4160U-7
Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 1A 150MHz 400mW Surface Mount SOT-323,
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KSC2383OTA
ON Semiconductor, Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92-3,
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ZTX855 - Tags