Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2366DS-T1-GE3

SI2366DS-T1-GE3

SI2366DS-T1-GE3

Part NumberSI2366DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.8A SOT-23

DatasheetSI2366DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount

To learn about the specification of SI2366DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2366DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2366DS-T1-GE3.
We are offering SI2366DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2366DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2366DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	335pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2366DS-T1-GE3 - Related Products

	IRF644STRLPBF	Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	SI3430DV-T1-GE3	Vishay Siliconix, N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP,	View
	2N7002-HF	Comchip Technology, N-Channel 60V 250mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	SSM3K72KCT,L3F	Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVII-H	View
	IRFH5210TRPBF	Infineon Technologies, N-Channel 100V 10A (Ta), 55A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	DMN2004K-7	Diodes Incorporated, N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	SI7464DP-T1-GE3	Vishay Siliconix, N-Channel 200V 1.8A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IPD60R360P7SAUMA1	Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	FDMC8327L	ON Semiconductor, N-Channel 40V 12A (Ta), 14A (Tc) 2.3W (Ta), 30W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	IPL60R125P7AUMA1	Infineon Technologies, N-Channel 650V 27A (Tc) 111W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View
	IXTP6N100D2	IXYS, N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-220AB,	View
	IRLL014NTRPBF	Infineon Technologies, N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View

SI2366DS-T1-GE3 - Tags

SI2366DS-T1-GE3 SI2366DS-T1-GE3 PDF SI2366DS-T1-GE3 datasheet SI2366DS-T1-GE3 specification SI2366DS-T1-GE3 image SI2366DS-T1-GE3 India Renesas Electronics India SI2366DS-T1-GE3 buy SI2366DS-T1-GE3 SI2366DS-T1-GE3 price SI2366DS-T1-GE3 distributor SI2366DS-T1-GE3 supplier SI2366DS-T1-GE3 wholesales