Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2366DS-T1-GE3

SI2366DS-T1-GE3

SI2366DS-T1-GE3

Part NumberSI2366DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.8A SOT-23

DatasheetSI2366DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount

To learn about the specification of SI2366DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2366DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2366DS-T1-GE3.
We are offering SI2366DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2366DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2366DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	335pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2366DS-T1-GE3 - Related Products

	FDI030N06	ON Semiconductor, N-Channel 60V 120A (Tc) 231W (Tc) Through Hole I2PAK (TO-262), PowerTrench®	View
	IRF820APBF	Vishay Siliconix, N-Channel 500V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB,	View
	TSM05N03CW RPG	Taiwan Semiconductor Corporation, N-Channel 30V 5A (Ta) 3W (Ta) Surface Mount SOT-223,	View
	SQJ422EP-T1_GE3	Vishay Siliconix, N-Channel 40V 74A (Tc) 83W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	IPP60R190P6XKSA1	Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3, CoolMOS™ P6	View
	SI7308DN-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	CDM7-650 TR13	Central Semiconductor Corp, N-Channel 650V 7A (Ta) 1.12W (Ta), 140W (Tc) Surface Mount DPAK,	View
	SIR870DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	ZVN4206AVSTZ	Diodes Incorporated, N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),	View
	NVD5C478NLT4G	ON Semiconductor, N-Channel 40V 14A (Ta), 45A (Tc) 3W (Ta), 30W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101	View
	IXTA64N10L2	IXYS, N-Channel 100V 64A (Tc) 357W (Tc) Surface Mount TO-263AA, Linear L2™	View
	PSMN6R5-80BS,118	Nexperia USA Inc., N-Channel 80V 100A (Tc) 210W (Tc) Surface Mount D2PAK,	View

SI2366DS-T1-GE3 - Tags

SI2366DS-T1-GE3 SI2366DS-T1-GE3 PDF SI2366DS-T1-GE3 datasheet SI2366DS-T1-GE3 specification SI2366DS-T1-GE3 image SI2366DS-T1-GE3 India Renesas Electronics India SI2366DS-T1-GE3 buy SI2366DS-T1-GE3 SI2366DS-T1-GE3 price SI2366DS-T1-GE3 distributor SI2366DS-T1-GE3 supplier SI2366DS-T1-GE3 wholesales