TSM80N1R2CH C5G
TSM80N1R2CH C5G
Part Number TSM80N1R2CH C5G Description MOSFET N-CH 800V 5.5A TO251 Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
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TSM80N1R2CH C5G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM80N1R2 Standard Package 1875 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 685pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 (IPAK) Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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