Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPW1R306PL,L1Q

TPW1R306PL,L1Q

TPW1R306PL,L1Q

Part NumberTPW1R306PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPW1R306PL Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

To learn about the specification of TPW1R306PL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPW1R306PL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPW1R306PL,L1Q.
We are offering TPW1R306PL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPW1R306PL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW1R306PL Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 30V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

TPW1R306PL,L1Q - Related Products

	CSD17308Q3T	Texas Instruments, N-Channel 30V 14A (Ta), 44A (Tc) 2.7W (Ta), 28W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	SPP08N80C3XKSA1	Infineon Technologies, N-Channel 800V 8A (Tc) 104W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	IRF644STRRPBF	Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	NVTFS5C471NLWFTAG	ON Semiconductor, N-Channel 40V 41A (Tc) 30W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IRFS4115TRL7PP	Infineon Technologies, N-Channel 150V 105A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®	View
	IXTH48N65X2	IXYS, N-Channel 650V 48A (Tc) 660W (Tc) Through Hole TO-247,	View
	DMN2058UW-7	Diodes Incorporated, N-Channel 20V 3.5A (Ta) 500mW (Ta) Surface Mount SOT-323,	View
	IPD60R3K3C6ATMA1	Infineon Technologies, N-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	SSM3K62TU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 1W (Ta) Surface Mount UFM, U-MOSVII-H	View
	AO6400	Alpha & Omega Semiconductor Inc., N-Channel 30V 6.9A (Ta) 2W (Ta) Surface Mount 6-TSOP,	View
	HUF75321P3	ON Semiconductor, N-Channel 55V 35A (Tc) 93W (Tc) Through Hole TO-220-3, UltraFET™	View
	FDB9406-F085	ON Semiconductor, N-Channel 40V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, PowerTrench®	View

TPW1R306PL,L1Q - Tags

TPW1R306PL,L1Q TPW1R306PL,L1Q PDF TPW1R306PL,L1Q datasheet TPW1R306PL,L1Q specification TPW1R306PL,L1Q image TPW1R306PL,L1Q India Renesas Electronics India TPW1R306PL,L1Q buy TPW1R306PL,L1Q TPW1R306PL,L1Q price TPW1R306PL,L1Q distributor TPW1R306PL,L1Q supplier TPW1R306PL,L1Q wholesales