TPN4R712MD,L1Q
TPN4R712MD,L1Q
Part Number TPN4R712MD,L1Q Description MOSFET P-CH 20V 36A 8TSON ADV Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN4R712MD,L1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN4R712MD Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance (3.3x3.3) Package / Case 8-PowerVDFN
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