Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	SSM3J372R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI7489DP-T1-GE3	Vishay Siliconix, P-Channel 100V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	RF4E075ATTCR	Rohm Semiconductor, P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
	DMP3030SN-7	Diodes Incorporated, P-Channel 30V 700mA (Ta) 500mW (Ta) Surface Mount SC-59-3,	View
	RSH070P05TB1	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	IRFR9210PBF	Vishay Siliconix, P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	IRF7726TRPBF	Infineon Technologies, P-Channel 30V 7A (Ta) 1.79W (Ta) Surface Mount Micro8™, HEXFET®	View
	FQPF47P06	ON Semiconductor, P-Channel 60V 30A (Tc) 62W (Tc) Through Hole TO-220F, QFET®	View
	BUK6D43-40PX	Nexperia USA Inc., P-Channel 40V 6A (Ta) 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101	View
	IRF9317TRPBF	Infineon Technologies, P-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	TSM3443CX6 RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount SOT-26,	View
	SI1467DH-T1-E3	Vishay Siliconix, P-Channel 20V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales