Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8819EDB-T2-E1

SI8819EDB-T2-E1

SI8819EDB-T2-E1

Part NumberSI8819EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 2.9A 4-MICROFOOT

DatasheetSI8819EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8819EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8819EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8819EDB-T2-E1.
We are offering SI8819EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8819EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8819EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 3.7V
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 6V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8819EDB-T2-E1 - Related Products

	SI1401EDH-T1-GE3	Vishay Siliconix, P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	DMP1096UCB4-7	Diodes Incorporated, P-Channel 12V 2.6A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,	View
	IRFU9024NPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	SI9433BDY-T1-E3	Vishay Siliconix, P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SO,	View
	NVD5117PLT4G-VF01	ON Semiconductor, P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK,	View
	SQ1421EDH-T1_GE3	Vishay Siliconix, P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	DMP3036SFG-7	Diodes Incorporated, P-Channel 30V 8.7A (Ta) 950mW (Ta) Surface Mount PowerDI3333-8,	View
	AUIRF4905STRL	Infineon Technologies, P-Channel 55V 42A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, HEXFET®	View
	SQ3427AEEV-T1_GE3	Vishay Siliconix, P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	DMP1081UCB4-7	Diodes Incorporated, P-Channel 12V 3A (Ta), 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,	View
	RQ6P015SPTR	Rohm Semiconductor, P-Channel 100V 1.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),	View
	TPS1100PWR	Texas Instruments, P-Channel 15V 1.27A (Ta) 504mW (Ta) Surface Mount 8-TSSOP,	View

SI8819EDB-T2-E1 - Tags

SI8819EDB-T2-E1 SI8819EDB-T2-E1 PDF SI8819EDB-T2-E1 datasheet SI8819EDB-T2-E1 specification SI8819EDB-T2-E1 image SI8819EDB-T2-E1 India Renesas Electronics India SI8819EDB-T2-E1 buy SI8819EDB-T2-E1 SI8819EDB-T2-E1 price SI8819EDB-T2-E1 distributor SI8819EDB-T2-E1 supplier SI8819EDB-T2-E1 wholesales