SI8819EDB-T2-E1
SI8819EDB-T2-E1
Part Number SI8819EDB-T2-E1
Description MOSFET P-CH 12V 2.9A 4-MICROFOOT
Package / Case 4-XFBGA
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Lead Time To be Confirmed
Detailed Description P-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)
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SI8819EDB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8819EDB
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 3.7V
Rds On (Max) @ Id, Vgs 80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 6V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (0.8x0.8)
Package / Case 4-XFBGA
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