Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	SI3415A-TP	Micro Commercial Co, P-Channel 20V 4A 1.4W Surface Mount SOT-23,	View
	FDY101PZ	ON Semiconductor, P-Channel 20V 150mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®	View
	SQA401EJ-T1_GE3	Vishay Siliconix, P-Channel 20V 3.75A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	IRLMS5703TRPBF	Infineon Technologies, P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	SI7439DP-T1-GE3	Vishay Siliconix, P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SUD50P06-15-GE3	Vishay Siliconix, P-Channel 60V 50A (Tc) 2.5W (Ta), 113W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	SSM3J64CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 12V 1A (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View
	SI4425DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IPD50P03P4L11ATMA1	Infineon Technologies, P-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	DMP2130L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	SI4401BDY-T1-GE3	Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IRF9540SPBF	Vishay Siliconix, P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales