Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	SSM3J56ACT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI	View
	IRF7416TRPBF	Infineon Technologies, P-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	BSP92PH6327XTSA1	Infineon Technologies, P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	PMN30XPX	Nexperia USA Inc., P-Channel 20V 5.2A (Ta) 550mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP,	View
	SI5441BDC-T1-GE3	Vishay Siliconix, P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™, TrenchFET®	View
	RZL035P01TR	Rohm Semiconductor, P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	FDS9435A	ON Semiconductor, P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	STS10P4LLF6	STMicroelectronics, P-Channel 40V 10A (Ta) 2.7W (Ta) Surface Mount 8-SO, STripFET™ F6	View
	ZXM64P02XTA	Diodes Incorporated, P-Channel 20V 3.5A (Ta) 1.1W (Ta) Surface Mount 8-MSOP,	View
	BSV236SPH6327XTSA1	Infineon Technologies, P-Channel 20V 1.5A (Ta) 560mW (Ta) Surface Mount PG-SOT363-6, OptiMOS™	View
	SI7117DN-T1-E3	Vishay Siliconix, P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	TT8U1TR	Rohm Semiconductor, P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST,	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales