Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R303NL,L1Q

TPN4R303NL,L1Q

TPN4R303NL,L1Q

Part NumberTPN4R303NL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 30V 63A 8TSON

DatasheetTPN4R303NL

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 40A (Tc) 700mW (Ta), 34W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R303NL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R303NL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R303NL,L1Q.
We are offering TPN4R303NL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R303NL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R303NL
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	14.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 34W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R303NL,L1Q - Related Products

	STW43N60DM2	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ DM2	View
	TK55S10N1,LQ	Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	SIRA18DP-T1-GE3	Vishay Siliconix, N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STD35NF06LT4	STMicroelectronics, N-Channel 60V 35A (Tc) 80W (Tc) Surface Mount DPAK, STripFET™ II	View
	STL11N65M2	STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount,	View
	AON2290	Alpha & Omega Semiconductor Inc., N-Channel 100V 4.5A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),	View
	IRFR110TRLPBF	Vishay Siliconix, N-Channel 100V 4.3A (Tc) 25W (Tc) Surface Mount D-Pak,	View
	BSZ035N03MSGATMA1	Infineon Technologies, N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	IPA60R160P6XKSA1	Infineon Technologies, N-Channel 600V 23.8A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™ P6	View
	SI4136DY-T1-GE3	Vishay Siliconix, N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IXFK66N85X	IXYS, N-Channel 850V 66A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™	View
	NDP7060	ON Semiconductor, N-Channel 60V 75A (Tc) 150W (Tc) Through Hole TO-220-3,	View

TPN4R303NL,L1Q - Tags

TPN4R303NL,L1Q TPN4R303NL,L1Q PDF TPN4R303NL,L1Q datasheet TPN4R303NL,L1Q specification TPN4R303NL,L1Q image TPN4R303NL,L1Q India Renesas Electronics India TPN4R303NL,L1Q buy TPN4R303NL,L1Q TPN4R303NL,L1Q price TPN4R303NL,L1Q distributor TPN4R303NL,L1Q supplier TPN4R303NL,L1Q wholesales