TPN4R303NL,L1Q

Part NumberTPN4R303NL,L1Q

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R303NL
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	14.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 34W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

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