TPN22006NH,LQ
TPN22006NH,LQ
Part Number TPN22006NH,LQ
Description MOSFET N CH 60V 9A 8-TSON
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN22006NH,LQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN22006NH
Standard Package 3000
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 30V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 18W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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