TPH3212PS
TPH3212PS
Part Number TPH3212PS Description GANFET N-CH 650V 27A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 27A (Tc) 104W (Tc) Through Hole TO-220AB
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TPH3212PS - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH3212PS Standard Package 50 Manufacturer Transphorm Series - Packaging Tube Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 72mOhm @ 17A, 8V Vgs(th) (Max) @ Id 2.6V @ 400uA Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 400V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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