Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPH1R712MD
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	182nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	10900pF @ 10V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

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TPH1R712MD,L1Q

Part NumberTPH1R712MD,L1Q