TPH1R712MD,L1Q
TPH1R712MD,L1Q
Part Number TPH1R712MD,L1Q
Description MOSFET P-CH 20V 60A 8SOP ADV
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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TPH1R712MD,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH1R712MD
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 182nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 10900pF @ 10V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
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