SI7613DN-T1-GE3
SI7613DN-T1-GE3
Part Number SI7613DN-T1-GE3 Description MOSFET P-CH 20V 35A 1212-8 PPAK Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SI7613DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7613DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7613DN-T1-GE3.
We are offering SI7613DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7613DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7613DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.7mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2620pF @ 10V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SI7613DN-T1-GE3 - Related ProductsMore >>
FQD5P10TM ON Semiconductor, P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak, QFET®
View
BSP613PH6327XTSA1 Infineon Technologies, P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
DMP32D5SFB-7B Diodes Incorporated, P-Channel 30V 400mA (Ta) 500mW (Ta) Surface Mount X1-DFN1006-3,
View
DMP32D4SFB-7B Diodes Incorporated, P-Channel 30V 400mA (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
DMP2069UFY4-7 Diodes Incorporated, P-Channel 20V 2.5A (Ta) 530mW (Ta) Surface Mount DFN2015H4-3,
View
CSD25481F4 Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™
View
ZVP3306A Diodes Incorporated, P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole TO-92-3,
View
QS6U24TR Rohm Semiconductor, P-Channel 30V 1A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),
View
SQM120P06-07L_GE3 Vishay Siliconix, P-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
SQJ479EP-T1_GE3 Vishay Siliconix, P-Channel 80V 32A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
VP0109N3-G Microchip Technology, P-Channel 90V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
RW1E025RPT2CR Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
SI7613DN-T1-GE3 - Tags
English
