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TP2510N8-G

TP2510N8-G

Part NumberTP2510N8-G

ManufacturerMicrochip Technology

DescriptionMOSFET P-CH 100V 0.48A SOT89-3

DatasheetTP2510

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

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TP2510N8-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TP2510
Standard Package	1
Manufacturer	Microchip Technology
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	480mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	125pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA

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