Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA483DJ-T1-GE3

SIA483DJ-T1-GE3

SIA483DJ-T1-GE3

Part NumberSIA483DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 12A SC70-6

DatasheetSIA483DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA483DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA483DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA483DJ-T1-GE3.
We are offering SIA483DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA483DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA483DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	21mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA483DJ-T1-GE3 - Related Products

	NTA4151PT1H	ON Semiconductor, P-Channel 20V 760mA (Tj) 301mW (Tj) Surface Mount SC-75, SOT-416,	View
	SI4459ADY-T1-GE3	Vishay Siliconix, P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	NTTFS3A08PZTAG	ON Semiconductor, P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3),	View
	SQD40P10-40L_GE3	Vishay Siliconix, P-Channel 100V 38A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	2SJ649-AZ	Renesas Electronics America, P-Channel 60V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab,	View
	IXTT20P50P	IXYS, P-Channel 500V 20A (Tc) 460W (Tc) Surface Mount TO-268, PolarP™	View
	DMP22D6UT-7	Diodes Incorporated, P-Channel 20V 430mA (Ta) 150mW (Ta) Surface Mount SOT-523,	View
	DMP2130L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	PMZB670UPE,315	Nexperia USA Inc., P-Channel 20V 680mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	FDG312P	ON Semiconductor, P-Channel 20V 1.2A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	IXTA10P50P	IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarP™	View
	CSD25485F5	Texas Instruments, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View

SIA483DJ-T1-GE3 - Tags

SIA483DJ-T1-GE3 SIA483DJ-T1-GE3 PDF SIA483DJ-T1-GE3 datasheet SIA483DJ-T1-GE3 specification SIA483DJ-T1-GE3 image SIA483DJ-T1-GE3 India Renesas Electronics India SIA483DJ-T1-GE3 buy SIA483DJ-T1-GE3 SIA483DJ-T1-GE3 price SIA483DJ-T1-GE3 distributor SIA483DJ-T1-GE3 supplier SIA483DJ-T1-GE3 wholesales