SIA483DJ-T1-GE3
SIA483DJ-T1-GE3
Part Number SIA483DJ-T1-GE3 Description MOSFET P-CH 30V 12A SC70-6 Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA483DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA483DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA483DJ-T1-GE3.
We are offering SIA483DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA483DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA483DJ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 15V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
SIA483DJ-T1-GE3 - Related ProductsMore >>
NTTFS3A08PZTWG ON Semiconductor, P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3),
View
SSM3J144TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
SI4463BDY-T1-GE3 Vishay Siliconix, P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
IXTP52P10P IXYS, P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-220AB, PolarP™
View
SSM6J501NU,LF Toshiba Semiconductor and Storage, P-Channel 20V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
View
AOSP21321 Alpha & Omega Semiconductor Inc., P-Channel 30V 11A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
IRF9321TRPBF Infineon Technologies, P-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SI7465DP-T1-E3 Vishay Siliconix, P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SSM3J143TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
MIC94050YM4-TR Microchip Technology, P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SOT-143, SymFET™
View
SBSS84LT1G ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
AON6407 Alpha & Omega Semiconductor Inc., P-Channel 30V 32A (Ta), 85A (Tc) 7.3W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6),
View
SIA483DJ-T1-GE3 - Tags
English
