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TP0604N3-G


TP0604N3-G

Part NumberTP0604N3-G

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TP0604N3-G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1000
ManufacturerMicrochip Technology
Series-
PackagingBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C430mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2.4V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 20V
FET Feature-
Power Dissipation (Max)740mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

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