IAUT165N08S5N029ATMA2
IAUT165N08S5N029ATMA2
Part Number IAUT165N08S5N029ATMA2
Description MOSFET N-CH 165A 80V 120V 8HSOF
Package / Case 8-PowerSFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1
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IAUT165N08S5N029ATMA2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IAUT165N08S5N029
Standard Package 2000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6370pF @ 40V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
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