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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TK100A08N1,S4X
Toshiba Semiconductor and Storage, N-Channel 80V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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FQP20N06
ON Semiconductor, N-Channel 60V 20A (Tc) 53W (Tc) Through Hole TO-220-3, QFET®
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CSD19505KTT
Texas Instruments, N-Channel 80V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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PSMN6R5-80BS,118
Nexperia USA Inc., N-Channel 80V 100A (Tc) 210W (Tc) Surface Mount D2PAK,
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SIHP25N60EFL-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-220AB,
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BUK9Y21-40E,115
Nexperia USA Inc., N-Channel 40V 33A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101
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STS26N3LLH6
STMicroelectronics, N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ VI
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FQP6N40C
ON Semiconductor, N-Channel 400V 6A (Tc) 73W (Tc) Through Hole TO-220-3, QFET®
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R6009JND3TL1
Rohm Semiconductor, N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount TO-252,
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NTMFS4982NFT1G
ON Semiconductor, N-Channel 30V 26.5A (Ta), 207A (Tc) 1.5W (Ta) Surface Mount 5-DFN (5x6) (8-SOFL),
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IPA80R650CEXKSA2
Infineon Technologies, N-Channel 800V 8A (Ta) 33W (Tc) Through Hole TO-220-3F, CoolMOS™
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PSMN3R5-40YSDX
Nexperia USA Inc., N-Channel 40V 120A (Ta) 115W (Ta) Surface Mount LFPAK56, Power-SO8,
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