IPT60R028G7XTMA1
IPT60R028G7XTMA1
Part Number IPT60R028G7XTMA1
Description MOSFET N-CH 600V 75A HSOF-8
Package / Case 8-PowerSFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 75A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2
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IPT60R028G7XTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPT60R028G7
Standard Package 2000
Manufacturer Infineon Technologies
Series CoolMOS™ G7
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 28.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 400V
FET Feature -
Power Dissipation (Max) 391W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-2
Package / Case 8-PowerSFN
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