TK7S10N1Z,LQ


TK7S10N1Z,LQ

Part NumberTK7S10N1Z,LQ

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TK7S10N1Z,LQ - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs48mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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