Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK560A60Y
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	560mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 300V
FET Feature	-
Power Dissipation (Max)	30W
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

NTMFS5844NLT1G	ON Semiconductor, N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
FDA59N25	ON Semiconductor, N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-3PN, UniFET™	View
IPN80R4K5P7ATMA1	Infineon Technologies, N-Channel 800V 1.5A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
DMN61D8L-7	Diodes Incorporated, N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount SOT-23,	View
BSP296NH6327XTSA1	Infineon Technologies, N-Channel 100V 1.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™	View
AOTF11S65L	Alpha & Omega Semiconductor Inc., N-Channel 650V 11A (Tc) 31W (Tc) Through Hole TO-220-3F, aMOS™	View
BSP149H6327XTSA1	Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
R6004JND3TL1	Rohm Semiconductor, N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount TO-252,	View
QS5U34TR	Rohm Semiconductor, N-Channel 20V 1.5A (Ta) 900mW (Ta) Surface Mount TSMT5,	View
RUF015N02TL	Rohm Semiconductor, N-Channel 20V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3,	View
DMN1004UFV-7	Diodes Incorporated, N-Channel 12V 70A (Tc) 1.9W (Ta) Surface Mount PowerDI3333-8,	View
STB21N90K5	STMicroelectronics, N-Channel 900V 18.5A (Tc) 250W (Tc) Surface Mount D2PAK, SuperMESH5™	View

TK560A60Y,S4X

Part NumberTK560A60Y,S4X