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TK39A60W,S4VX

TK39A60W,S4VX

Part NumberTK39A60W,S4VX

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 600V 39A TO220-3

DatasheetTK39A60W

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS

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TK39A60W,S4VX - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK39A60W
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 300V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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