TK35N65W,S1F
TK35N65W,S1F
Part Number TK35N65W,S1F
Description MOSFET N-CH 650V 35A TO-247
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247
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TK35N65W,S1F - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK35N65W
Standard Package 30
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
FET Feature -
Power Dissipation (Max) 270W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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