BSC012N06NSATMA1
BSC012N06NSATMA1
Part Number BSC012N06NSATMA1 Description TRENCH 40<-<100V Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 100A 214W (Tc) Surface Mount PG-TSON-8-3
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BSC012N06NSATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC012N06NS Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSON-8-3 Package / Case 8-PowerTDFN
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