Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK290P60Y
Standard Package	2000
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	730pF @ 300V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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SIHG24N65EF-GE3	Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC,	View
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IRF1010EZPBF	Infineon Technologies, N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
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RS1E150GNTB	Rohm Semiconductor, N-Channel 30V 15A (Ta) 3W (Ta), 22.9W (Tc) Surface Mount 8-HSOP,	View
SSM3K44FS,LF	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount SSM,	View
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IXTN660N04T4	IXYS, N-Channel 40V 660A (Tc) 1040W (Tc) Chassis Mount SOT-227B, TrenchT4™	View
PSMN021-100YLX	Nexperia USA Inc., N-Channel 100V 49A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8,	View
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TK290P60Y,RQ

Part NumberTK290P60Y,RQ