FDM3622
FDM3622
Part Number FDM3622 Description MOSFET N-CH 100V 4.4A 8MLP Package / Case 8-PowerWDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 4.4A (Ta) 2.1W (Ta) Surface Mount 8-MLP (3.3x3.3)
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FDM3622 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDM3622 Standard Package 3000 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3) Package / Case 8-PowerWDFN
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BSZ440N10NS3GATMA1 Infineon Technologies, N-Channel 100V 5.3A (Ta), 18A (Tc) 29W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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STP23N80K5 STMicroelectronics, N-Channel 800V 16A (Tc) 190W (Tc) Through Hole TO-220-3, MDmesh™ K5
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